Patent · US Expired

Resistive memory device and method for writing to a resistive memory cell in a resistive memory device

US7518902B2 · kind B2 · utility

3Cited by

2References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Heinz Hoenigschmid · Starnberg, DE
Milena Dimitrova · Unterhaching, DE
Corvin Liaw · Birkenfeld, DE
Michael Angerbauer · Freutsmoos, DE

Key dates

Filing date	Dec 23, 2005
Grant date	Apr 14, 2009
Priority date	—
Expiry date	Jan 15, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device and method of operating the same. In one embodiment, the memory device includes a resistive memory cell including a resistive memory element wherein the resistive memory element is designed to acquire a low resistance state when applying a programming voltage and acquire to a high resistance state when applying an erasing voltage; and wherein the writing time for changing the resistance state of the resistive memory element can be relatively reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.