Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
US7521089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2002 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus for controlling the migration of reaction by-product gases from a chemical vapor deposition (CVD) process chamber to a transfer vacuum chamber shared by other process chambers. Separate regulated flows of purge gas are provided to the CVD process chamber and the transfer vacuum chamber before establishing a pathway for substrate transfer. A pressure differential is created between the transfer vacuum chamber and the CVD process chamber that reduces or prevents the migration of CVD reaction by-product gases arising from the establishment of the substrate transfer pathway. While the pathway is established, a directional flow of purge gas is maintained from the transfer vacuum chamber into the CVD process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.