Semiconductor device and method for manufacturing the same
US7521324B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 31, 2004 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Mar 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.