Low temperature process for polysilazane oxidation/densification
US7521378B2 · kind B2 · utility
133Cited by
25References
84Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2004 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Oct 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.