Method and apparatus for inspecting pattern defects and mirror electron projection type or multi-beam scanning type electron beam apparatus
US7521676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2006 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Oct 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a mirror electron projection (MPJ) type (SEPJ type included) scanning electron beam apparatus that is capable of performing condition setup, and a method and apparatus for inspecting pattern defects with the scanning electron beam apparatus. A mirror electron projection type defect inspection apparatus, which comprises a charging device for emitting a charging electron beam, electron beam irradiation means for shedding a mirror electron projection electron beam onto an inspection region near which an electrical potential distribution is formed, detection means for detecting secondary electrons or reflected electrons generated from a surface and proximity of the specimen, and defect detection means for detecting a defect by processing a mirror image signal that is detected by the detection means, includes irradiation condition optimization means for optimizing charging electron beam irradiation conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.