Entire encapsulation of Cu interconnects using self-aligned CuSiN film
US7524755B2 · kind B2 · utility
26Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.