Johnny Widodo
21Patents
4h-index
58Co-inventors
58Inventor score
Filing activity: Feb 22, 2006 → Aug 2, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7524755B2 | Entire encapsulation of Cu interconnects using self-aligned CuSiN film | Electricity | 26 | Expired |
| US7566656B2 | Method and apparatus for providing void structures | Electricity | 12 | Active |
| US7847402B2 | BEOL interconnect structures with improved resistance to stress | Electricity | 4 | Active |
| US7838390B2 | Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein | Electricity | 4 | Active |
| US8716081B2 | Capacitor top plate over source/drain to form a 1T memory device | Electricity | 4 | Active |
| US8178417B2 | Method of forming shallow trench isolation structures for integrated circuits | Electricity | 4 | Active |
| US8274115B2 | Hybrid orientation substrate with stress layer | Electricity | 3 | Active |
| US7687381B2 | Method of forming electrical interconnects within insulating layers that form consecutive sidewalls including forming a reaction layer on the inner sidewall | Electricity | 3 | Active |
| US8053327B2 | Method of manufacture of an integrated circuit system with self-aligned isolation structures | Electricity | 2 | Active |
| US7923365B2 | Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon | Electricity | 2 | Active |
| US7541288B2 | Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques | Electricity | 1 | Active |
| US7622403B2 | Semiconductor processing system with ultra low-K dielectric | Electricity | 1 | Active |
| US7459388B2 | Methods of forming dual-damascene interconnect structures using adhesion layers having high internal compressive stresses | Electricity | 1 | Active |
| US7906426B2 | Method of controlled low-k via etch for Cu interconnections | Electricity | 0 | Active |
| US7829422B2 | Integrated circuit having ultralow-K dielectric layer | Electricity | 0 | Active |
| US7767577B2 | Nested and isolated transistors with reduced impedance difference | Electricity | 0 | Active |
| US7999300B2 | Memory cell structure and method for fabrication thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US7737029B2 | Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby | Electricity | 0 | Active |
| US7932178B2 | Integrated circuit having a plurality of MOSFET devices | Electricity | 0 | Active |
| US8143651B2 | Nested and isolated transistors with reduced impedance difference | Electricity | 0 | Active |
| US7795680B2 | Integrated circuit system employing selective epitaxial growth technology | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.