Strained MOS devices using source/drain epitaxy

US7525161B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Meikei Ieong · Wappingers Falls, US
• Xiao Hu Liu · Briarcliff Manor, US
• Qiqing C. Ouyang · Yorktown Heights, US
• Siddhartha Panda · Beacon, US
• Haizhou Yin · Poughkeepsie, US

Key dates

• Filing date: Jan 31, 2007
• Grant date: Apr 28, 2009
• Expiry date: Jan 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

NMOS and PMOS device structures with separately strained channel regions and methods of their fabrication are disclosed. The source and the drain of the NMOS device is epitaxially grown of a material which causes a shift in the strain of the NMOS device channel in the tensile direction. While, the source and the drain of the PMOS device is epitaxially grown of a material which causes a shift in the strain of the PMOS device channel in the compressive direction.