Patent · US Active

Method for reducing silicide defects by removing contaminants prior to drain/source activation

US7528026B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Markus Lenski · Dresden, DE
Ralf van Bentum · Radebeul, DE
Ekkehard Pruefer · Dresden, DE

Key dates

Filing date	Dec 7, 2006
Grant date	May 5, 2009
Priority date	—
Expiry date	Apr 26, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10B10/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By consuming a surface portion of polysilicon material or silicon material after implantation and prior to activation of dopants, contaminants may be efficiently removed, thereby significantly enhancing the process uniformity during a subsequent silicidation process. Hence, the defect rate during the silicidation process, for instance “missing silicide” defects, may be significantly reduced, thereby also enhancing the reliability of static RAM cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.