Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel

US7528027B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huilong Zhu · Poughkeepsie, US
• Mahender Kumar · Hopewell Junction, US
• Dan M. Mocuta · Herent, BE
• Ravikumar Ramachandran · Beacon, US
• Wenjuan Zhu · Fishkill, US

Key dates

• Filing date: Mar 25, 2008
• Grant date: May 5, 2009
• Expiry date: Mar 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.