Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
US7528078B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Dec 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of forming an electronic device can include patterning a semiconductor layer to define an opening extending to an insulating layer, wherein the insulating layer lies between a substrate and the semiconductor layer. After patterning the semiconductor layer, the opening can have a bottom, and the semiconductor layer can have a sidewall and a surface. The surface can be spaced apart from the insulating layer, and the sidewall can extend from the surface towards the insulating layer. The process can also include depositing a nitride layer within the opening, wherein depositing is performed using a PECVD technique. The process can further include densifying the nitride layer. The process can still further include removing a part of the nitride layer, wherein a remaining portion of the nitride layer can lie within the opening and be spaced apart from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.