Method for fabricating an electrical component

US7531406B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alejandro Avellan · Munich, DE
• Thomas Hecht · Dresden, DE
• Stefan Jakschik · Kessel-Lo, BE
• Uwe Schroeder · Fishkill, US

Key dates

• Filing date: Apr 7, 2006
• Grant date: May 12, 2009
• Expiry date: Mar 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/0387

Abstract

An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.