Polymer for immersion lithography and photoresist composition
US7534548B2 · kind B2 · utility
1Cited by
14References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2005 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Aug 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.