ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US7537804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Mar 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M2-M1-R- and M1-(R-M2-)x: where x is at least 2; where M1 is a first metal-containing precursor comprising a first metal, M2 is a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term “directly follows” indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.