Method for producing a layer structure

US7538008B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Diego Feijoo · Burghausen, DE
• Guenter Schwab · Vilshofen an der Donau, DE
• Thomas Buschhardt · Burghausen, DE

Key dates

• Filing date: May 3, 2007
• Grant date: May 26, 2009
• Expiry date: May 5, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02049
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A layer structure comprising a smoothed interlayer and an overlying layer applied on the interlayer, wherein the interlayer is treated with a gaseous etchant containing hydrogen fluoride, a material removal being obtained thereby and the interlayer being smoothed.