Method of room temperature growth of SiOx on silicide as an etch stop layer for metal contact open of semiconductor devices
US7538029B2 · kind B2 · utility
0Cited by
9References
13Claims
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Key dates
| Filing date | Jul 6, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicide is protected during MC RIE etch by first forming an oxide film over the silicide and, after performing MC RIE etch, etching the oxide film. The oxide film is formed from a film of alloyed metal-silicon (M-Si) on the layer of silicide, then wet etching the metal-silicon. An ozone plasma treatment process can be an option to densify the oxide film. The oxide film may be etched by oxide RIE or wet etch, using 500:1 DHF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.