Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures
US7538353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Apr 25, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dual damascene structure comprising a composite barrier/etch stop layer including a lower silicon carbide (SiC) layer and an upper first oxygen doped SiC layer formed over a substrate is provided. A first dielectric layer is formed over the first oxygen doped SiC layer followed by a second oxygen doped SiC etch stop layer, and a second dielectric layer. An opening with a via and an overlying trench extends through the second dielectric layer, the second oxygen doped SiC etch stop layer, the first dielectric layer, the upper first oxygen doped SiC layer and at least a portion of the lower silicon carbide (SiC) layer. The opening is filled with a diffusion barrier layer and a metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.