Semiconductor device with a field stop zone

US7538412B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Helmut Strack · Hersbruck, DE
• Carsten Schaeffer · Annenheim, AT
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Jun 30, 2006
• Grant date: May 26, 2009
• Expiry date: Jan 10, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/461

Abstract

A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.