Precursor for film formation and method for forming ruthenium-containing film
US7544389B2 · kind B2 · utility
4Cited by
1References
17Claims
0Family size
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Key dates
| Filing date | Sep 26, 2005 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Sep 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein:2x+2≦y+zand 2≦x≦15and z>yand t+u≧1 (t+u preferably equal to 1)x, y, and z being positive integers equal to or greater than 1, t and u being integers greater than or equal to zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.