Non-volatile memory cell with charge storage element and method of programming

US7544968B1 · kind B1 · utility

Assignee

• XILINX, INC. · US

Inventors

• Shahin Toutounchi · Pleasanton, US
• James Karp · Saratoga, US
• Jongheon Jeong · Campbell, US
• Michael G. Ahrens · Sunnyvale, US
• Michael J. Hart · Palo Alto, US

Key dates

• Filing date: Aug 24, 2005
• Grant date: Jun 9, 2009
• Expiry date: Dec 6, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B20/25

Abstract

An MOS transistor is programmed in a non-volatile memory cell. A storage capacitor in the non-volatile memory cell is used to enhance programming efficiency by providing additional charge to the programming terminal of the MOS transistor during breakdown of the gate dielectric, thus avoiding soft programming faults. In a particular embodiment the storage capacitor is a second MOS transistor having a thicker gate dielectric layer than the dielectric layer of the programmable MOS transistor.