Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process
US7547569B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Nov 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.