Patent · US Active

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

US7547610B2 · kind B2 · utility

12Cited by

4References

12Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Christoph Schwan · Gebhardshain, DE
Joe Bloomquist · Dresden, DE
Peter Javorka · Radebeul, DE
Manfred Horstmann · Dresden, DE
Sven Beyer · Dresden, DE
Markus Forsberg · Dresden, DE
Frank Wirbeleit · Dresden, DE
Karla Romero · Dresden, DE

Key dates

Filing date	Apr 12, 2007
Grant date	Jun 16, 2009
Priority date	—
Expiry date	Apr 12, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/601
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stressed dielectric fill material including compressive and tensile stress may be appropriately provided in the respective isolation trenches in order to correspondingly adapt the charge carrier mobility of respective channel regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.