Joe Bloomquist
7Patents
4h-index
12Co-inventors
43Inventor score
Filing activity: Nov 9, 2006 → Feb 23, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7547610B2 | Method of making a semiconductor device comprising isolation trenches inducing different types of strain | Electricity | 12 | Active |
| US7863171B2 | SOI transistor having a reduced body potential and a method of forming the same | Electricity | 7 | Active |
| US7696052B2 | Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions | Electricity | 5 | Active |
| US7556996B2 | Field effect transistor comprising a stressed channel region and method of forming the same | Electricity | 4 | Active |
| US8138571B2 | Semiconductor device comprising isolation trenches inducing different types of strain | Electricity | 1 | Active |
| US8274120B2 | Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions | Electricity | 0 | Active |
| US7732291B2 | Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.