Patent · US Active

Field effect transistor comprising a stressed channel region and method of forming the same

US7556996B2 · kind B2 · utility

4Cited by

2References

6Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Christoph Schwan · Gebhardshain, DE
Joe Bloomquist · Dresden, DE
Kai Frohberg · Meißen, DE
Manfred Horstmann · Dresden, DE

Key dates

Filing date	Apr 18, 2007
Grant date	Jul 7, 2009
Priority date	—
Expiry date	Aug 6, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/822
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a field effect transistor comprises providing a substrate comprising, at least on a surface thereof, a first semiconductor material. A recess is formed in the substrate. The recess is filled with a second semiconductor material. The second semiconductor material has a different lattice constant than the first semiconductor material. A gate electrode is formed over the recess filled with the second semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.