Method of forming semiconductor devices by microwave curing of low-k dielectric films
US7557035B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2004 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jun 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of exposing low-k dielectric films to microwave radiation to cure the dielectric films. Microwave curing reduces the cure-time necessary to achieve the desired mechanical properties in the low-k films, thus decreasing the thermal exposure time for the NiSi transistor contacts. A lower thermal budget for interconnect fabrication is necessary to prevent damage to the NiSi transistor contacts and minimize thermal stressing of previously formed interconnect layers. Microwave-cured dielectric films also have higher mechanical strength and strong adhesion to overlying layers deposited during subsequent semiconductor device manufacturing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.