Closed loop dose control for ion implantation
US7557363B2 · kind B2 · utility
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10References
27Claims
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Key dates
| Filing date | Oct 4, 2006 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Oct 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.