Low temperature process for polysilazane oxidation/densification
US7557420B2 · kind B2 · utility
14Cited by
24References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2005 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Dec 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.