Methods for enhancing trench capacitance and trench capacitor
US7560360B2 · kind B2 · utility
32Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Feb 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
Methods for enhancing trench capacitance and a trench capacitor so formed are disclosed. In one embodiment a method includes forming a first portion of a trench; depositing a dielectric layer in the first portion; performing a reactive ion etching including a first stage to etch the dielectric layer and form a micro-mask on a bottom surface of the first portion of the trench and a second stage to form a second portion of the trench having a rough sidewall; depositing a node dielectric; and filling the trench with a conductor. The rough sidewall enhances trench capacitance without increasing processing complexity or cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.