Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7560364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | May 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.