Gas dielectric structure forming methods
US7560375B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a gas dielectric structure for a semiconductor structure by using a sacrificial layer. In particular, one embodiment of the invention includes forming an opening for semiconductor structure in a dielectric layer on a substrate; depositing a sacrificial layer over the opening; performing a directional etch on the sacrificial layer to form a sacrificial layer sidewall on the opening; depositing a conductive liner over the opening; depositing a metal in the opening; planarizing the metal and the conductive liner; removing the sacrificial layer sidewall to form a void; and depositing a cap layer over the void to form the gas dielectric structure. The invention is easily implemented in damascene wire formation processes, and improves structural stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.