Patent · US Expired

Generalization of the photo process window and its application to OPC test pattern design

US7568180B2 · kind B2 · utility

4Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 22, 2005
Grant dateJul 28, 2009
Priority date
Expiry dateFeb 22, 2025

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/705
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method comprises the steps of: (a) simulating on a processor a fabrication of a plurality of layout patterns by a lithographic process; (b) determining sensitivities of the layout patterns to a plurality of parameters based on the simulation; (c) using the sensitivities to calculate deviations of the patterns across a range of each respective one of the parameters; and (d) selecting ones of the patterns having maximum or near-maximum deviations to be used as test patterns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.