Generalization of the photo process window and its application to OPC test pattern design
US7568180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2005 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Feb 22, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method comprises the steps of: (a) simulating on a processor a fabrication of a plurality of layout patterns by a lithographic process; (b) determining sensitivities of the layout patterns to a plurality of parameters based on the simulation; (c) using the sensitivities to calculate deviations of the patterns across a range of each respective one of the parameters; and (d) selecting ones of the patterns having maximum or near-maximum deviations to be used as test patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.