Patent · US Active

Incorporation of nitrogen into high k dielectric film

US7569284B2 · kind B2 · utility

3Cited by
70References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 3, 2008
Grant dateAug 4, 2009
Priority date—
Expiry dateJul 3, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31678
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.