Method of forming a silicon oxynitride layer
US7569502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | May 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiOxNy gate dielectric and a method for forming a SiOxNy gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure is annealed after it is exposed to a plasma comprising a nitrogen source. In another aspect, a SiOxNy gate dielectric is formed in an integrated processing system by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 in one chamber of the integrated processing system and then exposing the structure to a plasma comprising a nitrogen source in another chamber of the integrated processing system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.