Film taking-off method
US7572714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2005 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Aug 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.