Back-to-back NPN/PNP protection diodes
US7573103B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2007 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN diode includes a p-type substrate connected to ground, a well of n-type material formed in the p-type substrate in direct physical contact with the p-type substrate and electrically connected to the p-type substrate via a first metal line, a well of p-type material formed in the first well of n-type material, a first n-type region formed in the well of p-type material in direct physical contact with the well of p-type material and connected to the word line of the memory device, and a first p-type region formed in the well of n-type material in direct physical contact with the well of n-type material and electrically connected to the well of p-type material via a second metal line. The PNP diode includes a n-type substrate connected to ground, a well of p-type material formed in the n-type substrate in direct physical contact with the n-type substrate and electrically connected to the n-type substrate via a first metal line, a well of n-type material formed in the first well of p-type material, a first p-type region formed in the well of n-type material in direct physical …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.