Method for electrochemically mechanically polishing a conductive material on a substrate
US7576007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2006 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | May 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32125
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.