Patent · US Active

Optical metrology of single features

US7586623B2 · kind B2 · utility

2Cited by

15References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Joerg Bischoff · Ilmenau, DE
Xinhui Niu · San Jose, US
Junwei Bao · Los Altos, US

Key dates

Filing date	May 27, 2008
Grant date	Sep 8, 2009
Priority date	—
Expiry date	Jun 20, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG01N21/4788
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.