Chamber clean method using remote and in situ plasma cleaning systems
US7588036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2002 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Nov 19, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.