Methods for rapidly switching off an ion beam
US7589333B2 · kind B2 · utility
5Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30472
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.