Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
US7598145B2 · kind B2 · utility
49Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Jun 11, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Jun 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a microelectronic device comprising a plurality of Si1-yGey based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.