Patent · US Expired

Memory circuit including a resistive memory element and method for operating such a memory circuit

US7599209B2 · kind B2 · utility

4Cited by

5References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Heinz Hoenigschmid · Starnberg, DE
Milena Dimitrova · Unterhaching, DE
Corvin Liaw · Birkenfeld, DE
Michael Angerbauer · Freutsmoos, DE

Key dates

Filing date	Dec 23, 2005
Grant date	Oct 6, 2009
Priority date	—
Expiry date	Jan 29, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present invention relates to a memory circuit and method of operating the same. In at least one embodiment, the memory circuit includes a resistive memory element coupled to a plate potential by a first terminal; a bit line which is connectable to a second terminal of the resistive memory element; a programming circuit operable to change the resistance of the resistive memory element; a bleeder circuit operable to provide a bleeding current to or from the bit line due to a change of the resistance of the resistive memory element caused by the programming circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.