Method to improve the step coverage and pattern loading for dielectric films
US7601651B2 · kind B2 · utility
3Cited by
32References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Mar 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.