Memory having cap structure for magnetoresistive junction and method for structuring the same
US7602032B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 29, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Jun 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.