High current electron beam inspection
US7602197B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2004 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | May 17, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/307
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.