Metal-insulator-metal capacitor and method for fabricating the same
US7606021B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Feb 26, 2007 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jun 22, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
Abstract
A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.