Patent · US Active

Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method

US7611936B2 · kind B2 · utility

1Cited by

6References

20Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Leo Mathew · Austin, US
Ross E. Noble · Austin, US
Raghaw S. Rai · Austin, US

Key dates

Filing date	May 11, 2007
Grant date	Nov 3, 2009
Priority date	—
Expiry date	May 22, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for depositing metals on surfaces is provided which comprises (a) providing a substrate (103) having a horizontal surface (107) and a vertical surface (105); (b) depositing a first metal layer (109) over the horizontal and vertical surfaces; (c) depositing a layer of polysilicon (111) over the horizontal and vertical surfaces; (d) treating the layer of polysilicon with a plasma such that a residue (113) remaining from the treatment is preferentially formed over the horizontal surfaces rather than the vertical surfaces, and wherein the residue is resistant to a first metal etch; and (e) exposing the substrate to the first metal etch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.