Method of implanting a substrate and an ion implanter for performing the method
US7611975B2 · kind B2 · utility
1Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Sep 27, 2006 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Sep 27, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/961
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.