Patent · US Active

Technique for increasing adhesion of metallization layers by providing dummy vias

US7611991B2 · kind B2 · utility

5Cited by

4References

8Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Ralf Richter · Dresden, DE
Matthias Schaller · Dresden, DE
Ellen Claus · Dresden, DE
Eckhard Langer · Radebeul, DE

Key dates

Filing date	Sep 5, 2006
Grant date	Nov 3, 2009
Priority date	—
Expiry date	Sep 6, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By providing dummy vias below electrically non-functional metal regions, the risk for metal delamination in subsequent processes may be significantly reduced. Moreover, in some embodiments, the mechanical strength of the resulting metallization layers may be even more enhanced by providing dummy metal regions, which may act as anchors for an overlying non-functional metal region. In addition, dummy vias may also be provided in combination with electrically functional metal lines and regions, thereby also enhancing the mechanical stability and the electrical performance thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.