Multi-stage curing of low K nano-porous films
US7611996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2005 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.