Method and system for optimizing the number of word line segments in a segmented MRAM array
US7613868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Jun 16, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.